View BC818_404734.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BC817, BC818
NPN Silicon AF Transistors
3
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807, BC808 (PNP)

2 1
VPS05161
Type BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Maximum Ratings Parameter
Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
Symbol VCEO VCBO VEBO
BC817 45 50 5 500 1 100 200 330 150
BC818 25 30 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
mA A mA mW C
-65 ... 150
Thermal Resistance Junction - soldering point1) RthJS
215
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC817, BC818
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp.40 DC current gain 1) IC = 300 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp.40 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VCEsat VBEsat hFE hFE IEBO ICBO ICBO V(BR)CEO typ. max.
Unit
V 45 25 100 50 100 nA A nA 100 160 250 160 250 350 250 400 630
BC817 BC818
V(BR)CBO
BC817 BC818
V(BR)EBO
50 30 5 -
60 100 170 -
-
0.7 1.2 V
1) Pulse test: t 300s, D = 2%
2
Nov-29-2001
BC817, BC818
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 fT 170 typ. max.
Unit
MHz pF
3
Nov-29-2001
BC817, BC818
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC) VCE = 5V
10 3 fT MHz 5
BC 817/818 EHP00218
360
mW
300 270
P tot
240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120
10 2
5
C 150 TS
10 1 10 0
10 1
10 2
mA
10 3
C
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max Ptot DC
BC 817/818 EHP00220
Collector cutoff current ICBO = f (T A) VCBO = 25V
10 5
BC 817/818 EHP00221
D=
tp T
tp T
CBO
nA 10 4
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 3
max
10 2
typ
10 1
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
10 0
0
50
100
C TA
150
4
Nov-29-2001
BC817, BC818
Base-emitter saturation voltage IC = f(VBEsat ), hFE = 10
10 3
BC 817/818 EHP00222
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10
10 3
BC 817/818 EHP00223
C
mA 150 C 25 C -50 C
C
mA 150 C 25 C -50 C
10 2 5
10 2 5
10 1 5
10 1 5
10 0 5
10 0 5
10 -1
0
1.0
2.0
3.0
V
4.0
10 -1
0
0.2
0.4
0.6
V
0.8
V BEsat
VCEsat
DC current gain hFE = f(IC) VCE = 1V
10 3 h FE 5
BC 817/818 EHP00224
100 C 25 C -50 C
10 5
2
10 1 5
10 0 10 -1
10 0
10 1
10 2
mA 10 3
C
5
Nov-29-2001

▲Up To Search▲

Price & Availability of BC818

	To Download BC818 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .